MENÜ MENÜ
  • Sie verwenden einen veralteten Webbrowser, weshalb es zu Problemen mit der Darstellung kommen kann. Bei Problemen mit der Bestellabgabe können Sie gerne auch telefonisch bestellen unter: 01805 565554 (0,14€/min, mobil max.0,42€/min)

ZnO and GaN Devices for Nanophotonic and Microelectronic Applications

Tong:ZnO and GaN Devices for Nanophoton
Autor: Fei Tong
Verfügbarkeit: Auf Lager.
Artikelnummer: 1136369
ISBN / EAN: 9783659550928

Verfügbarkeit: sofort lieferbar

71,90
Inkl. MwSt. , zzgl. Versandkosten

Produktbeschreibung

The research work presented in this book is based on two direct and wide band gap semiconductors: ZnO and GaN. On the first part of the book, the synthesis of ZnO nanorod array via the low temperature solution growth method was discussed. Due to the high surface-to-volume ratio of ZnO nanorod, to alleviate the some of the drawbacks such as carrier mobility and thickness dilemma of organic solar cells, ZnO nanorod array were integrated into organic solar cells. Power conversion efficiency ( ) of 1.8% is achieved in our ZnO nanorods integrated bulk heterojunction organic solar cells on flexible In2O3-PET substrates. On the second part of the book, the fabrication and characterization of Aluminum gallium nitride/gallium nitride high electron mobility transistors (AlGaN/GaN HEMTs) were discussed. Device testing and characterization under both room temperature and high temperature up to 300 °C were performed. The results show that the device can operate even at 300 °C with minimal degradation.

Zusatzinformation

Autor Verlag LAP Lambert Academic Publishing
ISBN / EAN 9783659550928 Bindung Taschenbuch

Sie könnten auch an folgenden Produkten interessiert sein

Titelliste

0 Kundenmeinungen

Bitte schreiben Sie uns Ihre Meinung zu: ZnO and GaN Devices for Nanophotonic and Microelectronic Applications

  • Wenn Sie dieses Eingabefeld sehen sollten, lassen Sie es leer!